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参数资料
| 型号： | 2N6693 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | BIP General Purpose Power |
| 英文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-61 |
| 文件页数： | 1/2页 |
| 文件大小： | 33K |
| 代理商： | 2N6693 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: -
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N6676
2N6691
2N6678
2N6693
Units
Collector-Emitter Voltage
VCEO
300
400
Vdc
Collector-Base Voltage
VCBO
450
650
Vdc
Collector-Base Voltage
VCEX
450
650
Vdc
Emitter-Base Voltage
VEBO
8.0
Vdc
Base Current
IB
5.0
Adc
Collector Current
IC
15
Adc
2N6676
2N6678
2N6691
2N6693
Total Power Dissipation
@ TA = 25
0C
@ TC = 25
0C(1)
PT
6.0
(2)
175
3.0
(3)
175
W
Operating & Storage Junction
Temperature Range
Top, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
1.0
0C/W
1)
Derate linearly 1.0 W/
0C for TC > 250C
2)
Derate linearly 34.2 mW/
0C for TA > 250C
3)
Derate linearly 17.1 mW/
0C for TA > 250C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N6676, 2N6691
2N6678, 2N6693
V(BR)CEO
300
400
Vdc
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = 1.5 Vdc
2N6676, 2N6691
VCE = 650 Vdc, VBE = 1.5 Vdc
2N6678, 2N6693
ICEX
0.1
mAdc
TECHNICAL DATA
2N6676 JAN, JTX, JTXV
2N6678 JAN, JTX, JTXV
2N6691 JAN, JTX, JTXV
2N6693 JAN, JTX, JTXV
Processed per MIL-PRF-19500/538
NPN POWER SWITCHING SILICON TRANSISTOR
2N6676, 2N6678
TO-3 (TO-204AA)
2N6691, 2N6693
TO-61
MIL-PRF
QPL
DEVICES
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