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参数资料
| 型号： | 2N5416S |
| 厂商： | MICROSEMI CORP |
| 元件分类： | BIP General Purpose Small Signal |
| 英文描述： | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件页数： | 1/3页 |
| 文件大小： | 186K |
| 代理商： | 2N5416S |
Type 2N5416S
Geometry TBD
Polarity PNP
Qual Level: Pending
Data Sheet No. 2N5416S
Generic Part Number:
2N5416S
REF: MIL-PRF-19500/485
Features:
General-purpose low power ampli-
fier transistor which operates over
a wide temperature range.
Housed in TO-39 case.
Also it will be available in chip
form using the TBD chip geome-
try.
The Min and Max limits shown are
Rating
Symbol
Rating
Unit
Collector-Emitter voltage
VCEO
300
V
Collector-Base Voltage
VCBO
350
V
Emitter-Base voltage
VEBO
6.0
V
Collector Current, Continuous
IC
1.0
A
Power, TA = +25
oC
PT
0.75
Watt
Power, TC = +25
oC
PT
10
Watt
Thermal Resistance
RJC
17.5
oC/W
Operating Junction Temperature
TJ
-65 to +200
oC
Storage Temperature
TSTG
-65 to +200
oC
Maximum Ratings
TC = 25
oC unless otherwise specified
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5416SJANTX | 制造商:n/a 功能描述:2N5416S DC85 N10D9H 制造商:Microsemi Corporation 功能描述: |
| 2N5416UA | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 4-Pin UA 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 1A 4PIN UA - Bulk |
| 2N5416UA/TR | 功能描述:POWER BJT 制造商:microsemi corporation 系列:- 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:300V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:2V @ 5mA，50mA 电流 - 集电极截止（最大值）:50μA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:30 @ 50mA，10V 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:4-SMD，无引线 供应商器件封装:UA 标准包装:100 |
| 2N5417 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 500MA I(C) | TO-39 |
| 2N5418 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SERIES 2N TRANSISTORS |
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