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参数资料
| 型号： | 2N5416S |
| 厂商： | MICROSEMI CORP |
| 元件分类： | BIP General Purpose Small Signal |
| 英文描述： | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件页数： | 2/3页 |
| 文件大小： | 186K |
| 代理商： | 2N5416S |
Data Sheet No. 2N5416S
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
IC = 50 mA, IB = 5 mA, L = 25 mH, f = 30-60 Hz
Collector-Base Cutoff Current
VCB = 280 V
ICBO1
---
50
A
VCB = 350 V
ICBO2
---
500
A
VCB = 280 V, TA = +150
oC
ICBO3
---
1
mA
Emitter-Base Cutoff Current
VEB = 6 V
Collector-Emitter Cutoff Current
VCE = 250 V
ICEO1
---
50
A
VCE = 300 V
ICEO2
---
1
mA
Collector-Emitter Cutoff Current
VCE = 300 V, VBE = 1.5 V
nA
IEBO
---
20
Electrical Characteristics
TC = 25
oC unless otherwise specified
V(BR)CEO
200
---
V
ICEX
---
50
A
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 10 V, pulsed
hFE1
30
120
---
IC = 1.0 mA, VCE = 1.0 V, pulsed
hFE2
15
---
IC = 10 mA, VCE = 10 V, TA = -55
oC, pulsed h
FE3
15
---
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5 mA, pulsed
Base-Emitter Saturation Voltage
VCE = 10 V, IC = 50 mA, pulsed
VBE
---
1.5
V dc
VCE(sat)
---
2.0
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 10 V, IC = 10 mA, f = 5 MHz
Short-Circuit, Forward Current Transfer Ratio
VCE = 10 V, IC = 5 mA, f = < 1 kHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 5 V, IC = 0, 100 kHz < f < 1 MHz
---
hFE
55
---
|hFE|
3.0
15
---
COBO
---
15
pF
CIBO
---
75
pF
Pulse Response
Symbol
Min
Max
Unit
Turn on Time
VCC = 200 V, IC = 50 mA, IB1 = 5 mA
Turn off Time
VCC = 200 V, IC = 50 mA, IB1 = IB2 = 5 mA
toff
---
10
s
ton
---
1.0
s
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5416SJANTX | 制造商:n/a 功能描述:2N5416S DC85 N10D9H 制造商:Microsemi Corporation 功能描述: |
| 2N5416UA | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 4-Pin UA 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 1A 4PIN UA - Bulk |
| 2N5416UA/TR | 功能描述:POWER BJT 制造商:microsemi corporation 系列:- 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:300V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:2V @ 5mA，50mA 电流 - 集电极截止（最大值）:50μA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:30 @ 50mA，10V 频率 - 跃迁:- 工作温度:-65°C ~ 200°C（TJ） 安装类型:表面贴装 封装/外壳:4-SMD，无引线 供应商器件封装:UA 标准包装:100 |
| 2N5417 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 500MA I(C) | TO-39 |
| 2N5418 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SERIES 2N TRANSISTORS |
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