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| 型号： | 2N6798U |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 200 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CERAMIC, LCC-18 |
| 文件页数： | 1/4页 |
| 文件大小： | 175K |
| 代理商： | 2N6798U |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
T4-LDS-0049 Rev. 2 (092059)
Page 1 of 4
DEVICES
LEVELS
2N6798
2N6798U
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
200
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
Continuous Drain Current
TC = +25°C
ID1
5.5
Adc
Continuous Drain Current
TC = +100°C
ID2
3.5
Adc
Max. Power Dissipation
Ptl
25 (1)
W
Drain to Source On State Resistance
Rds(on)
0.4 (2)
Ω
Operating & Storage Temperature
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 3.5A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
200
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 160V
VGS = 0V, VDS = 160V, Tj = +125°C
IDSS1
IDSS2
25
0.25
Adc
mAdc
Static Drain-Source On-State Resistance
VGS = 10V, ID = 3.5A pulsed
VGS = 10V, ID = 5.5A pulsed
Tj = +125°C
VGS = 10V, ID = 3.5A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.4
0.42
0.75
Ω
Diode Forward Voltage
VGS = 0V, ID = 5.5A pulsed
VSD
1.4
Vdc
TO-205AF
(formerly TO-39)
U – 18 LCC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6799 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3A I(D) | TO-39 |
| 2N6800 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 3A 3PIN TO-39 - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 400V, 3A TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: No |
| 2N6800_01 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N–CHANNEL ENHANCE-MENT POWER MOSFET |
| 2N6800JANTX | 制造商:International Rectifier 功能描述: |
| 2N6800LCC4 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE |
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