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参数资料
| 型号： | 2N6798U |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | JFETs |
| 英文描述： | 5.5 A, 200 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CERAMIC, LCC-18 |
| 文件页数： | 3/4页 |
| 文件大小： | 175K |
| 代理商： | 2N6798U |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557
T4-LDS-0049 Rev. 2 (092059)
Page 3 of 4
PACKAGE DIMENSIONS
Dimensions
Ltr
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.355
7.75
9.02
CH
.160
.180
4.07
4.57
HD
.335
.370
8.51
9.39
h
.009
.041
0.23
1.04
J
.028
.034
0.72
0.86
2
k
.029
.045
0.74
1.14
3
LD
.016
.021
0.41
0.53
7, 8
LL
.500
.750
12.7
19.05
7, 8
LS
.200 TP
5.08 TP
6
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7, 8
L2
.250
6.35
7, 8
P
.070
1.78
5
Q
.050
1.27
4
r
.010
0.25
9
α
45° TP
6
NOTES:
1
Dimensions are in inches. Millimeters are given for general information only.
2
Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
3
Dimension k measured from maximum HD.
4
Outline in this zone is not controlled.
5
Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
6
LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
7
All three leads.
8
Radius (r) applies to both inside corners of tab.
9
Drain is electrically connected to the case.
10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1. Physical dimensions for TO-205AF
.
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相关代理商/技术参数 |
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| 2N6799 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3A I(D) | TO-39 |
| 2N6800 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 14A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 3A 3PIN TO-39 - Bulk 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 400V, 3A TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: No |
| 2N6800_01 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N–CHANNEL ENHANCE-MENT POWER MOSFET |
| 2N6800JANTX | 制造商:International Rectifier 功能描述: |
| 2N6800LCC4 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N–CHANNEL ENHANCEMENT MODE |
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