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参数资料
| 型号： | 2N6802-QR-BR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封装： | HERMETIC SEALED, TO-39, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 19K |
| 代理商： | 2N6802-QR-BR1 |
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
2N6802
IRFF430
Document Number 5357
Issue: 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VGS
Gate – Source Voltage
ID
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
ID
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
IDM
Pulsed Drain Current 1
PD
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
EAS
Single Pulse Avalanche Energy 2
dv/dt
Peak Diode Recovery 3
TJ , Tstg
Operating and Storage Temperature Range
RθJC
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction-to-Ambient
±20V
2.5A
1.5A
11A
25W
0.2W/°C
0.35mJ
3.5V/ns
–55 to +150°C
5.0°C/W
175°C/W
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)
max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
1
2
3
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
TO39 – Package (TO-205AF)
Notes
1) Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
2) @ VDD = 50V , Peak IL = 2.5A , Starting TJ = 25°C
3) @ ISD ≤ 2.5A , di/dt ≤ 75A/s , VDD ≤ BVDSS , TJ ≤ 150°C , SUGGESTED RG = 7.5
N–CHANNEL ENHANCEMENT
MODE POWER MOSFET
FEATURES
AVALANCHE ENERGY RATED
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
SIMPLE DRIVE REQUIREMENTS
Pin 1 – Source
Pin 2 – Gate
Pin 3 – Drain
BVDSS
500V
ID(cont)
2.5
RDS(on)
1.5
Underside View
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6802-JQR-AR1 | 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6802LCC4-JQR-B | 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6804 | 11 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N6804 | 11 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N6806 | 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6802TXV | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N6802U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| 2N6802UJANTX | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 500V 2.5A 18-Pin LLCC |
| 2N6804 | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 11A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 11A 2PIN TO-204AA - Bulk 制造商:Microsemi Corporation 功能描述:2N6804 - Bulk 制造商:International Rectifier 功能描述:P CH MOSFET, -100V, 11A, TO-204AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No |
| 2N6804_12 | 制造商:MAS 制造商全称:MAS 功能描述:This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications. |
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