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参数资料
| 型号： | 2N7000-T92-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 251K |
| 代理商： | 2N7000-T92-R |
2N7000
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-059.B
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS≤1M)
VDGR
60
V
Continuous
±20
V
Gate -Source Voltage
Non Repetitive (tp<50
s)
VGS
±40
V
Continuous
115
mA
Maximum Drain Current
Pulsed
ID
800
mA
Maximum Power Dissipation
Derated above 25
°C
PD
400
3.2
mW
mW/
°C
Operating and Storage Temperature
TJ,TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction-to-Ambient
θJA
312.5
°C/W
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=10 A
60
V
1
A
Drain-Source Leakage Current
IDSS
VDS=60V, VGS =0V
TJ=125°C
0.5
mA
Gate-Body leakage, Forward
IGSSF
VGS =20V, VDS=0V
100
nA
Gate-Body leakage Reverse
IGSSR
VGS =-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID=250A
1
2.1
2.5
V
VGS =10V, ID=500mA
TJ=100°C
1.2
1.7
7.5
13.5
Static Drain-Source On-Resistance
RDS(ON)
VGS =5.0V, ID=50mA
TJ=100°C
1.7
2.4
7.5
13.5
VGS = 10V, ID=500mA
0.6
3.75
Drain-Source On-Voltage
VDS(ON)
VGS = 5.0V, ID=50mA
0.09
1.5
V
On-State Drain Current
ID(ON)
VGS=10V, VDS 2VDS(ON)
500
2700
mA
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
20
50
pF
Output Capacitance
COSS
11
25
pF
Reverse Transfer Capacitance
CRSS
VDS=25V,VGS=0V, f=1.0MHz
4
5
pF
Turn-On Time
tON
VDD=30V, RL=150,
ID=200mA, VGS=10V, RGEN=25
20
ns
Turn-Off Time
tOFF
VDD=30V, RL=150, ID=200mA,
VGS=10V, RGEN=25
20
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward
Voltage
VSD
VGS=0V, Is=115mA(Note )
0.88
1.5
V
Maximum Continuous Drain-Source
Diode Forward Current
Is
115
mA
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
0.8
A
Note: Pulse Test: Pulse Width≤300s, Duty Cycle≤2.0%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7000TA | 功能描述:MOSFET 60V N-Channel Sm Sig RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000-TR1 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, N-Channel, TO-92VAR |
| 2N7000-TR7 | 制造商:Vishay Intertechnologies 功能描述:TO226 VNDS06 |
| 2N7000TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
| 2N7000-TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
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