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参数资料
| 型号： | 2N7000 |
| 厂商： | DIOTEC SEMICONDUCTOR AG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | ROHS COMPLIANT, PLASTIC, 10D3, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 103K |
| 代理商： | 2N7000 |
2N7000
2N7000
N
N-Channel Enhancement Mode Field Effect Transistor
N-Kanal Feldeffekt Transistor – Anreicherungstyp
N
Version 2011-02-16
Dimensions - Mae [mm]
Power dissipation
Verlustleistung
350 mW
Plastic case
Kunststoffgehuse
TO-92
(10D3)
Weight approx.
Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
2N7000
Drain-Source-voltage – Drain-Source-Spannung
VDSS
60 V
Drain-Gate-voltage – Drain-Gate-Spannung
RGS ≤ 1 MΩ
VDGR
60 V
Gate-Source-voltage – Gate-Source-Spannung
dc
tp < 50 s
VGSS
± 20 V
± 40 V
Power dissipation – Verlustleistung
Ptot
350 mW
Drain current continuos – Drainstrom (dc)
Peak Drain current – Drain-Spitzenstrom
ID
IDM
200 mA
500 mA
Operating Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
150°C
-55…+150°C
Diotec Semiconductor AG
http://www.diotec.com/
1
16
18
9
2 x 2.54
S G D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
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