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| 型号： | 2N7000RLRPG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 200MA TO-92 |
| 产品变化通告： | Product Discontinuation 03/Oct/2007 |
| 标准包装： | 2,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 60pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3（TO-226AA）成形引线 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 带盒（TB） |
2N7000G
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate ? Body Leakage Current, Forward
(V GS = 0, I D = 10 m Adc)
(V DS = 48 Vdc, V GS = 0)
(V DS = 48 Vdc, V GS = 0, T J = 125 ° C)
(V GSF = 15 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSSF
60
?
?
?
?
1.0
1.0
? 10
Vdc
m Adc
mAdc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain ? Source On ? Resistance
Drain ? Source On ? Voltage
On ? State Drain Current
Forward Transconductance
(V DS = V GS , I D = 1.0 mAdc)
(V GS = 10 Vdc, I D = 0.5 Adc)
(V GS = 4.5 Vdc, I D = 75 mAdc)
(V GS = 10 Vdc, I D = 0.5 Adc)
(V GS = 4.5 Vdc, I D = 75 mAdc)
(V GS = 4.5 Vdc, V DS = 10 Vdc)
(V DS = 10 Vdc, I D = 200 mAdc)
V GS(th)
r DS(on)
V DS(on)
I d(on)
g fs
0.8
?
?
?
?
75
100
3.0
5.0
6.0
2.5
0.45
?
?
Vdc
W
Vdc
mAdc
m mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
60
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 V, V GS = 0,
f = 1.0 MHz)
C oss
C rss
?
?
25
5.0
SWITCHING CHARACTERISTICS (Note 1)
Turn ? On Delay Time
Turn ? Off Delay Time
(V DD = 15 V, I D = 500 mA,
R G = 25 W , R L = 30 W , V gen = 10 V)
t on
t off
?
?
10
10
ns
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
2N7000G
2N7000RLRAG
Device
Package
TO ? 92
(Pb ? Free)
TO ? 92
(Pb ? Free)
Shipping ?
1000 Units / Bulk
2000 Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7000T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 200MA I(D) | TO-92VAR |
| 2N7000TA | 功能描述:MOSFET 60V N-Channel Sm Sig RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000-TR1 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor, N-Channel, TO-92VAR |
| 2N7000-TR7 | 制造商:Vishay Intertechnologies 功能描述:TO226 VNDS06 |
| 2N7000TRI | 制造商:SILICONIX 功能描述:2N7000 FORMED LEADS |
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