参数资料
型号: 2N7000ZL1G
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封装: LEAD FREE, CASE 29-11, 3 PIN
文件页数: 2/4页
文件大小: 159K
代理商: 2N7000ZL1G
2N7000
http://onsemi.com
27
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10 mAdc)
V(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
IDSS
1.0
mAdc
GateBody Leakage Current, Forward
(VGSF = 15 Vdc, VDS = 0)
IGSSF
10
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
3.0
Vdc
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
rDS(on)
5.0
6.0
Ohm
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 4.5 Vdc, ID = 75 mAdc)
VDS(on)
2.5
0.45
Vdc
OnState Drain Current
(VGS = 4.5 Vdc, VDS = 10 Vdc)
Id(on)
75
mAdc
Forward Transconductance
(VDS = 10 Vdc, ID = 200 mAdc)
gfs
100
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
60
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f 1 0 MH )
Coss
25
Reverse Transfer
Capacitance
( DS
, GS
,
f = 1.0 MHz)
Crss
5.0
SWITCHING CHARACTERISTICS (Note 1)
TurnOn Delay Time
(VDD = 15 V, ID = 500 mA,
ton
10
ns
TurnOff Delay Time
(VDD 15 V, ID 500 mA,
RG = 25 W, RL = 30 W, Vgen = 10 V)
toff
10
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
相关PDF资料
PDF描述
2N7000 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000 210 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
2N7002C1A-JQRS.GCDM 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002C1A-JQRS.XRAY 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002C1A-JQRS.CVP 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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