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参数资料
| 型号： | 2N7000ZL1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | LEAD FREE, CASE 29-11, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 159K |
| 代理商： | 2N7000ZL1G |
2N7000
http://onsemi.com
28
I D
,DRAIN
CURRENT
(AMPS)
r DS(on)
,ST
ATIC
DRAIN-SOURCE
ON-RESIST
ANCE
(NORMALIZED)
V GS(th)
,THRESHOLD
VOL
TAGE
(NORMALIZED)
I D
,DRAIN
CURRENT
(AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0 1.02.03.04.05.06.07.08.09.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
10
0 1.02.03.04.05.06.07.08.09.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
+100
+140
-60
-20
+20
+60
+100
+140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
DrainSource OnResistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V
-55°C
25°C
125°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7000ZL-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7000ZL-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7000ZL-T92-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7002 | 功能描述:MOSFET N-CHANNEL 60V 115mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002 _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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