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参数资料
| 型号： | 2N7002_NB9G002 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 115MA SOT-23 |
| 产品变化通告： | Product Discontinuation Notice 17/Jan/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 带卷 (TR) |
Electrical Characteristics T
A
= 25 o C unless otherwise noted
Symbol
Parameter
Conditions
Typ e
Min
Typ
Max
Units
ON CHARACTERISTICS Continued (Note 1)
I D(ON)
On-State Drain Current
V GS = 4.5 V, V DS = 10 V
2N7000
75
600
mA
V GS = 10 V, V DS > 2 V DS(on)
V GS = 10 V, V DS > 2 V DS(on)
2N7002
NDS7002A
500
500
2700
2700
g FS
Forward Transconductance
V DS = 10 V, I D = 200 mA
2N7000
100
320
mS
V DS > 2 V DS(on) , I D = 200 mA
V DS > 2 V DS(on) , I D = 200 mA
2N7002
NDS7002A
80
80
320
320
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
t on
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
V DS = 25 V, V GS = 0 V,
f = 1.0 MHz
V DD = 15 V, R L = 25 ? ,
All
All
All
2N7000
20
11
4
50
25
5
10
pF
pF
pF
ns
I D = 500 mA, V GS = 10 V,
R GEN = 25
V DD = 30 V, R L = 150 ? ,
I D = 200 mA, V GS = 10 V,
R GEN = 25 ?
2N700 2
NDS7002A
20
t off
Turn-Off Time
V DD = 15 V, R L = 25 ? ,
2N7000
10
ns
I D = 500 mA, V GS = 10 V,
R GEN = 25
V DD = 30 V, R L = 150 ? ,
I D = 200 mA, V GS = 10 V,
R GEN = 25 ?
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
2N700 2
NDS7002 A
20
I S
Maximum Continuous Drain-Source Diode Forward Current
2N7002
115
mA
NDS7002A
280
I SM
Maximum Pulsed Drain-Source Diode Forward Current
2N7002
0.8
A
NDS7002A
1.5
V SD
Drain-Source Diode Forward
Voltage
V GS = 0 V, I S = 115 mA (Note 1)
V GS = 0 V, I S = 400 mA (Note 1)
2N7002
NDS7002 A
0.88
0.88
1.5
1.2
V
Note:
1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002NT1 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:30 V, 154 mA, Single |
| 2N7002P | 制造商:NXP Semiconductors 功能描述:MOSFETN CH60V0.36ASOT23 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.36A,SOT23 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.36A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:360mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.75V; No. of Pins:3 ;RoHS Compliant: Yes |
| 2N7002P,215 | 功能描述:MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002P,235 | 功能描述:MOSFET N-CH 60 V 360 mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002P@215 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 0.36A 3-Pin TO-236AB T/R |
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