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参数资料
| 型号： | 2N7002-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 115MA SOT23 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | TO-236 |
| 包装： | 带卷 (TR) |
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
SPECIFICATIONS 2N7000 AND 2N7002 (T A = 25 _ C UNLESS OTHERWISE NOTED)
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typ a
Min
Max
Min
Max
Unit
Switching d
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
t ON
t OFF
t ON
t OFF
V DD = 15 V, R L = 25 W
I D ^ 0.5 A, V GEN = 10 V, R G = 25 W
V DD = 30 V, R L = 150 W
I D ^ 0.2 A, V GEN = 10 V, R G = 25 W
7
7
7
11
10
10
20
20
ns
SPECIFICATIONS VQ1000J/P AND BS170 (T A = 25 _ C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P
BS170
Parameter
Symbol
Test Conditions
Typ a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = 100 m A
V DS = V GS , I D = 1 mA
70
2.1
60
0.8
2.5
60
0.8
3
V
V DS = 0 V, V GS = " 10 V
" 100
Gate-Body Leakage
I GSS
T J = 125 _ C
" 500
nA
V DS = 0 V, V GS = " 15 V
V DS = 25 V, V GS = 0 V
" 10
0.5
Zero Gate Voltage Drain Current
I DSS
V DS = 48 V, V GS = 0 V, T J = 125 _ C
500
m A
V DS = 60 V, V GS = 0 V
10
On-State Drain Current b
I D(on)
V DS = 10 V, V GS = 10 V
1
0.5
A
V GS = 5 V, I D = 0.2 A
4
7.5
Drain-Source On-Resistance b
r DS(on)
V GS = 10 V, I D = 0.2 A
V GS = 10 V, I D = 0.3 A
2.3
2.3
5.5
5
W
T J = 125 _ C
4.2
7.6
Forward Transconductance b
Common Source Output Conductance b
g fs
g os
V DS = 10 V, I D = 0.2 A
V DS = 10 V, I D = 0.5 A
V DS =5 V, I D = 0.05 A
0.5
100
100
mS
Dynamic
Input Capacitance
C iss
22
60
60
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS =25 V, V GS = 0 V
f = 1 MHz
11
2
25
5
pF
Switching d
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
t ON
t OFF
t ON
t OFF
V DD = 15 V, R L = 23 W
I D ^ 0.6 A, V GEN = 10 V, R G = 25 W
V DD = 25 V, R L = 125 W
I D ^ 0.2 A, V GEN = 10 V, R G = 25 W
7
7
7
7
10
10
10
10
ns
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v 80 m s duty cycle v 1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
Document Number: 70226
S-04279 — Rev. F, 16-Jul-01
VNBF06
www.vishay.com
11-3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236 |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N7002-T1-ER | 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R |
| 2N7002-T1-GE3 | 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-T1-JIT | 制造商:Vishay Intertechnologies 功能描述:2N7002-T1 WITH JIT FOR COMPAQ |
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