参数资料
型号: 2N7002
元件分类: 小信号晶体管
英文描述: 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 1/5页
文件大小: 167K
代理商: 2N7002
PAGE . 1
REV.0.1-FEB.3.2009
2N7002
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=5
R
DS(ON), VGS@4.5V,IDS@75mA=7.5
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750,Method 2026
Marking : S72
60V N-Channel Enhancement Mode MOSFET
Maximum Ratings and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
R
E
T
E
M
A
R
A
Pl
o
b
m
y
St
i
m
i
Ls
t
i
n
U
e
g
a
t
l
o
V
e
c
r
u
o
S
-
n
i
a
r
D
V
S
D
0
6V
e
g
a
t
l
o
V
e
c
r
u
o
S
-
e
t
a
G
V
S
G
+ 0
2V
t
n
e
r
u
C
n
i
a
r
D
s
u
o
u
n
i
t
n
o
C
I
D
0
5
2A
m
t
n
e
r
u
C
n
i
a
r
D
d
e
s
l
u
P
)
1
I
M
D
0
3
1A
m
n
o
i
t
a
p
i
s
i
D
r
e
w
o
P
m
u
m
i
x
a
M
T
A
5
2
=
O C
T
A
5
7
=
O C
P
D
0
5
3
0
1
2
W
m
e
g
n
a
R
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
d
n
a
n
o
i
t
c
n
u
J
g
n
i
t
a
r
e
p
O
T
J
T
,
G
T
S
0
5
1
+
o
t
5
-
O C
)
d
e
t
n
u
o
m
B
C
P
(
e
c
n
a
t
s
i
s
e
R
l
a
m
r
e
h
T
t
n
e
i
b
m
A
o
t
-
n
o
i
t
c
n
u
J
2
R θ
A
J
7
5
3
O
W
/
C
Gate
Drain
Source
1
2
3
相关PDF资料
PDF描述
2N7007P002 65 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7007P013 65 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7007P018 65 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7007P006 65 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7007P008 65 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
相关代理商/技术参数
参数描述
2N7002 _R1 _00001 制造商:PanJit Touch Screens 功能描述:
2N7002 215 制造商:PHILIPS-SEMI 功能描述:
2N7002 BK 功能描述:MOSFET N-CH 60V 0.115A SOT-23 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:有效 FET 类型:MOSFET N 通道,金属氧化物 FET 功能:标准 漏源极电压(Vdss):60V 电流 - 连续漏极(Id)(25°C 时):115mA(Tc) 不同?Id,Vgs 时的?Rds On(最大值):7.5 欧姆 @ 500mA,10V 不同 Id 时的 Vgs(th)(最大值):2.5V @ 250μA 不同 Vgs 时的栅极电荷(Qg):0.59nC(4.5V) 不同 Vds 时的输入电容(Ciss):50pF @ 25V 功率 - 最大值:350mW 工作温度:-65°C ~ 150°C(TJ) 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商器件封装:SOT-23 标准包装:3,500
2N7002 H6327 功能描述:MOSFET N-Channel 60V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002 L6327 功能描述:MOSFET N-KANAL SML SIG MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube