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参数资料
| 型号： | 2N7002E-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 72K |
| 代理商： | 2N7002E-13 |
DS30376 Rev. 4 - 2
1 of 3
2N7002E
www.diodes.com
Diodes Incorporated
2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Available in Lead Free/RoHS Compliant Version
(Note 2)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS
1.0MW
VDGR
60
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current
Continuous
ID
240
mA
Total Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Case: SOT-23
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin
Finish annealed over Alloy 42 leadframe). Please see
Ordering Information, Note 5, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K7B
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
D
G
S
T
C
U
D
O
R
P
W
E
N
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
SPICE MODEL: 2N7002E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002E215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 385MA 3-SOT-23 |
| 2N7002-E3 | 功能描述:MOSFET 60V 0.115A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N7002E-7 | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002E-7-F | 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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