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参数资料
| 型号： | 2N7002E-T1-GE3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 174K |
| 代理商： | 2N7002E-T1-GE3 |
Vishay Siliconix
2N7002E
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
www.vishay.com
1
N-Channel 60 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Low On-Resistance: 3
Low Threshold: 2 V (typ.)
Low Input Capacitance: 25 pF
Fast Switching Speed: 7.5 ns
Low Input and Output Leakage
Compliant to RoHS Directive 2002/95/EC
BENEFITS
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
PRODUCT SUMMARY
VDS (V)
RDS(on) ()ID (mA)
60
3 at VGS = 10 V
240
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Marking Code: 7E
Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free)
2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free)
Notes:
a. Pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
240
mA
TA = 70 °C
190
Pulsed Drain Currenta
IDM
1300
Power Dissipation
TA = 25 °C
PD
0.35
W
TA = 70 °C
0.22
Thermal Resistance, Junction-to-Ambient
RthJA
357
°C/W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002ET3G | 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 310mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.475A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:475mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes |
| 2N7002F,215 | 功能描述:MOSFET N-CH TRNCH 60V .475A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 475MA 3-SOT-23 |
| 2N7002FN3 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
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