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参数资料
| 型号： | 2N7002E-T1-GE3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 174K |
| 代理商： | 2N7002E-T1-GE3 |
www.vishay.com
2
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
Vishay Siliconix
2N7002E
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: pulse width
300 s duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Limits
Unit
Min.
Typ.a
Max.
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 10 A
60
68
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 A
12
2.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 15 V
± 10
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
A
VDS = 60 V, VGS = 0 V , TJ = 125 °C
500
On-State Drain Currentb
ID(on)
VGS = 10 V, VDS = 7.5 V
800
1300
mA
VGS = 4.5 V, VDS = 10 V
500
700
Drain-Source On-Resistanceb
RDS(on)
VGS = 10 V, ID = 250 mA
1.2
3
VGS = 4.5 V, ID = 200 mA
1.8
4
Forward Transconductanceb
gfs
VDS = 15 V, ID = 200 mA
600
mS
Diode Forward Voltage
VSD
IS = 200 mA, VGS = 0 V
0.85
1.2
V
Dynamica
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V
ID 250 mA
0.4
0.6
nC
Gate-Source Charge
Qgs
0.06
Gate-Drain Charge
Qgd
0.06
Input Capacitance
Ciss
VDS = 5 V, VGS = 0 V, f = 1 MHz
21
pF
Output Capacitance
Coss
7
Reverse Transfer Capacitance
Crss
2.5
Switchinga, c
Turn-On Time
td(on)
VDD = 10 V, RL = 40
ID 250 mA, VGEN = 10 V, Rg = 10
13
20
ns
Turn-Off Time
td(off)
18
25
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相关代理商/技术参数 |
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| 2N7002ET3G | 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 310mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.475A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:475mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes |
| 2N7002F,215 | 功能描述:MOSFET N-CH TRNCH 60V .475A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 475MA 3-SOT-23 |
| 2N7002FN3 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
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