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参数资料
| 型号： | 2N7002E-T1-GE3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 174K |
| 代理商： | 2N7002E-T1-GE3 |
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
www.vishay.com
3
Vishay Siliconix
2N7002E
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Gate-Source Voltage
On-Resistance vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
012345
VDS - Drain-to-Source Voltage (V)
V
GS = 10 V, 9 V, 8 V,
7 V, 6 V
3 V
5 V
4 V
I D
-
Drain
C
u
rrent
(A)
VGS - Gate-to-Source Voltage (V)
0
1
2
3
4
0246
8
10
I
D at 250 mA
I
D at 75 mA
R
DS(on)
-
On-Resistance
(
Ω
)
TJ - Junction Temperature (°C)
0.0
0.4
0.8
1.2
1.6
2.0
- 50
- 25
0
25
50
75
100
125
150
V
GS = 10 V at 250 mA
R
DS(on)
-
On-Resistance
(N
ormalized)
V
GS = 4.5 V
at 200 mA
Transfer Characteristics
On-Resistance vs. Drain Current
Threshold Voltage Variance Over Temperature
0.0
0.3
0.6
0.9
1.2
01
23
45
6
7
VGS - Gate-to-Source Voltage (V)
T
J = - 55 °C
125 °C
25 °C
I D
-
Drain
C
u
rrent
(A)
ID - Drain Current (A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.2
0.4
0.6
0.8
1.0
V
GS = 4.5 V
R
DS(on)
-
On-Resistance
(
Ω
)
V
GS = 10 V
- 0.8
- 0.6
- 0.4
- 0.2
0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
I
D = 250 A
TJ - Junction Temperature (°C)
V
GS(th)
-
V
ariance
(
V
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002ET3G | 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 310mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.475A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:475mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes |
| 2N7002F,215 | 功能描述:MOSFET N-CH TRNCH 60V .475A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 475MA 3-SOT-23 |
| 2N7002FN3 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
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