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参数资料
| 型号： | 2N7002E-T1-GE3 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 240 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 174K |
| 代理商： | 2N7002E-T1-GE3 |
www.vishay.com
4
Document Number: 70860
S11-0183-Rev. F, 07-Feb-11
Vishay Siliconix
2N7002E
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70860.
Capacitance
Source-Drain Diode Forward Voltage
VDS - Drain-to-Source Voltage (V)
0
8
16
24
32
40
0
5
10
15
20
25
C
rss
C
oss
C
iss
C
-
Capacitance
(pF)
VSD - Source-to-Drain Voltage (V)
0.1
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J = 85 °C
25 °C
- 55 °C
I S
-
So
u
rce
C
u
rrent
(A)
Gate Charge
Qg - Total Gate Charge (nC)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.1
0.2
0.3
0.4
0.5
V
DS = 30 V
I
D = 0.25 A
V
GS
-
Gate-to-So
u
rce
V
oltage
(
V
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002ET3G | 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 310mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.475A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:475mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes |
| 2N7002F,215 | 功能描述:MOSFET N-CH TRNCH 60V .475A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 475MA 3-SOT-23 |
| 2N7002FN3 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
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