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参数资料
| 型号： | 2N7002FN3T/R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, PLASTIC, DFN-3 |
| 文件页数： | 1/1页 |
| 文件大小： | 90K |
| 代理商： | 2N7002FN3T/R |
PAGE . 1
September 03.2010-REV.00
2N7002FN3
60V N-CHANNEL ENHANCEMENT MODE MOSFET
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=5Ω
R
DS(ON), VGS@4.5V,IDS@50mA=7.5Ω
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for Battery Operated Systems, Solid-State
Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: DFN 3L, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Marking: AH
Maximum Ratings and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note 1 : Maximum DC current limited by the package
2 : Surface mounted on FR4 board,t<10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DSEIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
0.042(1.05)
0.037(0.95)
0.013(0.32)
0.008(0.22)
0.014(0.36)
0.013(0.32)
0.008(0.22)
0.002(0.05) MAX.
0.026(0.65)
0.021(0.55)
0.0
(0.55)
0.047(0.45)
22
0.0
(0.55)
0.047(0.45)
22
0.0
(0.20)
0.004(0.10)
08
0.0
(0.20)
14
0.0
(0.20)
0.004(0.10)
08
DFN 3L
Unit : inch(mm)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
60
V
Gats-Source Voltage
VGS
+20
V
Continous Drain Current
I D
115
mA
Pulsed Drain Current (1)
I DM
800
mA
Maximum Power Dissipation
PD
150
mW
Junction-to Ambient Thermal Resistance (PCB mounted)2
R
θJA
883
oC/W
O per at i ng Junc t i on and S t or age Te m p er atur e Ra ng e
TJ,TSTG
-55 to +150
oC
1
2
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002FTR | 制造商:NXP Semiconductors 功能描述: |
| 2N7002-G | 功能描述:MOSFET 60V 7.5Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-G_12 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:MOSFET |
| 2N7002G-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:0.3A, 60V N-CHANNEL POWER MOSFET |
| 2N7002H-13 | 功能描述:MOSFET N-CH 60V 0.17A SOT23 制造商:diodes incorporated 系列:- 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:170mA（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:7.5 欧姆 @ 50mA，5V 不同 Id 时的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:0.35nC @ 4.5V 不同 Vds 时的输入电容（Ciss）:26pF @ 25V 功率 - 最大值:370mW 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23 标准包装:10,000 |
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