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| 型号： | 2N7002KT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | LEAD FREE, CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 98K |
| 代理商： | 2N7002KT3G |
Semiconductor Components Industries, LLC, 2007
April, 2007 Rev. 2
1
Publication Order Number:
2N7002K/D
2N7002K
Small Signal MOSFET
60 V, 380 mA, Single, NChannel, SOT23
Features
ESD Protected
Low RDS(on)
Surface Mount Package
This is a PbFree Device
Applications
Low Side Load Switch
Level Shift Circuits
DCDC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
V
GatetoSource Voltage
VGS
±20
V
Drain Current (Note 1)
Steady State
TA = 25°C
TA = 85°C
t < 5 s
TA = 25°C
TA = 85°C
ID
320
230
380
270
mA
Power Dissipation (Note 1)
Steady State
t < 5 s
PD
300
420
mW
Pulsed Drain Current (tp = 10 ms)
IDM
1.5
A
Operating Junction and Storage
Temperature Range
TJ, TSTG
55 to
+150
°C
Source Current (Body Diode)
IS
300
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
GateSource ESD Rating
(HBM, Method 3015)
ESD
900
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
JunctiontoAmbient Steady State
(Note 1)
RqJA
417
°C/W
JunctiontoAmbient t ≤ 5 s (Note 1)
RqJA
300
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
Device
Package
Shipping
ORDERING INFORMATION
2N7002KT1G
3000/Tape & Reel
Simplified Schematic
SOT23
CASE 318
STYLE 21
704 W
704
= Device Code
W
= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
2
1
Drain
Gate
2
1
3
Source
http://onsemi.com
SOT23
(PbFree)
60 V
1.6 W @ 10 V
RDS(on) MAX
380 mA
ID MAX
(Note 1)
V(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2.5 W @ 4.5 V
Gate
Source
Drain
3
2
1
(Top View)
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相关代理商/技术参数 |
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|---|---|
| 2N7002KTB | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
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| 2N7002K-TP | 功能描述:MOSFET 350mW, 60V, 340mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002KU | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:N Channel MOSFET |
| 2N7002KW | 功能描述:MOSFET NCHAN Enhance MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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