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| 型号： | 2N7002LT1H |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 92K |
| 代理商： | 2N7002LT1H |
Semiconductor Components Industries, LLC, 2011
February, 2011 Rev. 4
1
Publication Order Number:
2N7002L/D
2N7002L
Small Signal MOSFET
60 V, 115 mA, NChannel SOT23
Features
AEC Qualified
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
Drain Current
Pulsed (Note 2)
ID
IDM
±115
±75
±800
mAdc
GateSource Voltage
Continuous
Nonrepetitive (tp ≤ 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. FR5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
2N7002LT1G
SOT23
(PbFree)
3000 Tape & Reel
NChannel
SOT23
CASE 318
STYLE 21
MARKING
DIAGRAM
2
1
3
2N7002LT3G
10,000 Tape & Reel
http://onsemi.com
2N7002LT1H
SOT23
(Halide
Free)
3000 Tape & Reel
2N7002LT3H
10,000 Tape & Reel
60 V
7.5 W @ 10 V,
500 mA
RDS(on) MAX
115 mA
ID MAX
V(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
702 MG
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
702
= Device Code
M
= Date Code*
G
= PbFree Package
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7002LT3H | 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2N7002L | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 2N7002M | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002MT2 | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002T-TP | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002LT3 | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002LT3G | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002LTG | 制造商:ON Semiconductor 功能描述: |
| 2N7002M | 制造商:JIANGSU 制造商全称:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:MOSFET( N-Channel ) |
| 2N7002M1PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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