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参数资料
| 型号： | 2N7002LT1H |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 92K |
| 代理商： | 2N7002LT1H |
2N7002L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10 mAdc)
V(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
TJ = 25°C
(VGS = 0, VDS = 60 Vdc)
TJ = 125°C
IDSS
1.0
500
mAdc
GateBody Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
100
nAdc
GateBody Leakage Current, Reverse
(VGS = 20 Vdc)
IGSSR
100
nAdc
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
2.5
Vdc
OnState Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
ID(on)
500
mA
Static DrainSource OnState Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on)
3.75
0.375
Vdc
Static DrainSource OnState Resistance
(VGS = 10 V, ID = 500 mAdc)
TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc)
TC = 25°C
TC = 125°C
rDS(on)
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
gFS
80
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
25
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
5.0
pF
SWITCHING CHARACTERISTICS (Note 5)
TurnOn Delay Time
(VDD = 25 Vdc, ID ^ 500 mAdc,
RG = 25 W, RL = 50 W, Vgen = 10 V)
td(on)
20
ns
TurnOff Delay Time
td(off)
40
ns
BODYDRAIN DIODE RATINGS
Diode Forward OnVoltage
(IS = 11.5 mAdc, VGS = 0 V)
VSD
1.5
Vdc
Source Current Continuous
(Body Diode)
IS
115
mAdc
Source Current Pulsed
ISM
800
mAdc
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
相关PDF资料 |
PDF描述 |
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| 2N7002LT3H | 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2N7002L | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 2N7002M | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002MT2 | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002T-TP | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002LT3 | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002LT3G | 功能描述:MOSFET 60V 115mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002LTG | 制造商:ON Semiconductor 功能描述: |
| 2N7002M | 制造商:JIANGSU 制造商全称:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:MOSFET( N-Channel ) |
| 2N7002M1PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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