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参数资料
| 型号： | 2N7002FT/R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 475 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | PLASTIC, SOT-23, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 93K |
| 代理商： | 2N7002FT/R |
2SA1291 / 2SC3255
No.1201-4/4
PS
0
20
40
60
80
100
120
140
160
0
0.5
1.75
1.0
1.5
2.0
ITR03205
0
20
40
60
80
100
120
140
160
0
10
20
30
40
50
ITR03206
PC -- Ta
No
heat
sink
Ambient Temperature, Ta --
°C
Collector
Dissipation,
P
C
-
W
PC -- Tc
Case Temperature, Tc --
°C
Collector
Dissipation,
P
C
-
W
2SA1291 / 2SC3255
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相关PDF资料 |
PDF描述 |
|---|---|
| 2N7002G-AL6-R | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002G-AL3-R | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002KTB | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002KW | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002LG-AE2-R | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002-G | 功能描述:MOSFET 60V 7.5Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-G_12 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:MOSFET |
| 2N7002G-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:0.3A, 60V N-CHANNEL POWER MOSFET |
| 2N7002H-13 | 功能描述:MOSFET N-CH 60V 0.17A SOT23 制造商:diodes incorporated 系列:- 包装:带卷（TR） 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:170mA（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:7.5 欧姆 @ 50mA，5V 不同 Id 时的 Vgs（th）（最大值）:3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:0.35nC @ 4.5V 不同 Vds 时的输入电容（Ciss）:26pF @ 25V 功率 - 最大值:370mW 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23 标准包装:10,000 |
| 2N7002H6327 | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
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