参数资料
型号: 2N7002G-AL3-R
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 小信号晶体管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: HALOGEN FREE PACKAGE-3
文件页数: 6/6页
文件大小: 246K
代理商: 2N7002G-AL3-R
2N7002
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
6 of 6
www.unisonic.com.tw
QW-R206-037,H
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相关代理商/技术参数
参数描述
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2N7002H6327 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述:
2N7002H6327XT 制造商:Infineon Technologies AG 功能描述:N-KAN 制造商:Infineon Technologies AG 功能描述:MOSFET 2N-CH 60V 0.3A SOT363
2N7002H6327XTSA2 制造商:Infineon Technologies AG 功能描述:2N7002H6327XT 制造商:Infineon Technologies AG 功能描述:N-KANAL SMALL SIGNAL MOS - Tape and Reel
2N7002H-7 功能描述:MOSFET N-CH 60V 0.17A SOT23-3 制造商:diodes incorporated 系列:- 包装:剪切带(CT) 零件状态:有效 FET 类型:MOSFET N 通道,金属氧化物 FET 功能:标准 漏源极电压(Vdss):60V 电流 - 连续漏极(Id)(25°C 时):170mA(Ta) 不同?Id,Vgs 时的?Rds On(最大值):7.5 欧姆 @ 50mA,5V 不同 Id 时的 Vgs(th)(最大值):3V @ 250μA 不同 Vgs 时的栅极电荷(Qg):0.35nC @ 4.5V 不同 Vds 时的输入电容(Ciss):26pF @ 25V 功率 - 最大值:370mW 工作温度:-55°C ~ 150°C(TJ) 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商器件封装:SOT-23 标准包装:1