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参数资料
| 型号： | 2N7002KDWT/R7 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 1/5页 |
| 文件大小： | 113K |
| 代理商： | 2N7002KDWT/R7 |
PAGE . 1
May 21.2010-REV.01
2N7002KDW
FEATURES
R
DS(ON), VGS@10V,IDS@500mA=3Ω
R
DS(ON), VGS@4.5V,IDS@200mA=4Ω
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Very Low Leakage Current In Off Condition
Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
ESD Protected 2KV HBM
In compliance with EU RoHS 2002/95/EC directives
MECHANICALDATA
Case: SOT-363 Package
Terminals : Solderable per MIL-STD-750,Method 2026
Marking : K27
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Maximum RATINGS and Thermal Characteristics (T
A=25
OC unless otherwise noted )
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
0.087(2.20)
0.074(1.90)
0.056(1.40)
0.047(1.20)
0.054(1.35)
0.045(1.15)
0.012(0.30)
0.005(0.15)
0.030(0.75)
0.021(0.55)
0.040(1.00)
0.031(0.80)
0.010(0.25)
0.018(0.45)
0.006(0.15)
0.087(2.20)
0.078(2.00)
0.10 MAX.
0.010(0.25)
0.003(0.08)
0.044(1.10)
MAX.
SOT-363
Unit: inch (mm)
1
2
3
6
5
4
1
2
3
6
5
4
1
2
3
6
5
4
PA RA M E TE R
S ym bol
Li m i t
Uni t s
D r ai n- S o ur ce Vo ltage
V
DS
60
V
Ga t e - S our c e Vo lt age
V
GS
+ 20
V
C o nt i nuo us D r a i n C ur r e nt
I
D
11 5
m A
P uls ed D r ai n C ur r ent 1)
I
DM
800
m A
Ma xi mum P o we r D i s s i p a t i o n
T
A =2 5
OC
T
A =7 5
OC
P
D
200
120
mW
Oper ati ng J unc t i on and S t or age
Te m per atur e Ra ng e
T
J ,T STG
- 5 5 t o + 150
O C
Junction-to Ambient Thermal
Resistance(PCB mounted)2
R
θJA
625
O C/W
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7002L-T1 | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 2N7002LT1-TP | 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002 | 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7007P002 | 65 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2N7007P013 | 65 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002KE | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:N Channel MOSFET |
| 2N7002KFN3 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002KG | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:N-Ch Small Signal MOSFET with Gate Protection |
| 2N7002KG-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7002KL-AE2-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET |
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