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| 型号： | 2N7002KT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 320MA SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 320mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 24.5pF @ 20V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | 2N7002KT1GOSDKR |
2N7002K, 2V7002K
THERMAL CHARACTERISTICS
Characteristic
Junction ? to ? Ambient ? Steady State (Note 3)
Junction ? to ? Ambient ? t ≤ 5 s (Note 3)
Junction ? to ? Ambient ? Steady State (Note 4)
Junction ? to ? Ambient ? t ≤ 5 s (Note 4)
Symbol
R q JA
Max
300
92
417
154
Unit
° C/W
3. Surface ? mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
4. Surface ? mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
71
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
1
m A
V DS = 60 V
T J = 125 ° C
10
V GS = 0 V,
T J = 25 ° C
100
nA
V DS = 50 V
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
V DS = 0 V, V GS = ± 10 V
V DS = 0 V, V GS = ± 5.0 V
± 10
450
150
m A
nA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
4.0
2.3
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 500 mA
1.19
1.6
W
V GS = 4.5 V, I D = 200 mA
1.33
2.5
Forward Transconductance
g FS
V DS = 5 V, I D = 200 mA
530
mS
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1 MHz,
V DS = 20 V
V GS = 4.5 V, V DS = 10 V;
I D = 200 mA
24.5
4.2
2.2
0.7
0.1
0.3
0.1
pF
nC
SWITCHING CHARACTERISTICS, V GS = V (Note 6)
Turn ? On Delay Time
t d(ON)
12.2
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DD = 25 V,
I D = 500 mA, R G = 25 W
9.0
55.8
29
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
0.8
1.2
V
I S = 200 mA
5. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2
T J = 85 ° C
0.7
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