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| 型号： | 2N7002KT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 320MA SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 320mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 24.5pF @ 20V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | 2N7002KT1GOSDKR |
2N7002K, 2V7002K
PACKAGE DIMENSIONS
SOT ? 23 (TO ? 236)
CASE 318 ? 08
ISSUE AP
3
D
SEE VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
E
A
A1
1
e
2
b
H E
L1
L
q
c
0.25
MILLIMETERS
DIM MIN NOM MAX
A 0.89 1.00 1.11
A1 0.01 0.06 0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80 2.90 3.04
E 1.20 1.30 1.40
e 1.78 1.90 2.04
L 0.10 0.20 0.30
L1 0.35 0.54 0.69
H E 2.10 2.40 2.64
q 0 ° ??? 10 °
STYLE 21:
PIN 1. GATE
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0 °
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
???
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10 °
VIEW C
SOLDERING FOOTPRINT
0.95
2. SOURCE
3. DRAIN
0.95
0.037
0.037
2.0
0.079
0.9
0.035
0.8
SCALE 10:1
mm
inches
0.031
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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2N7002K/D
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| 2N7002KT1G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 60V 380mA SOT-23 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET, 60V, 380mA SOT-23 |
| 2N7002K-T1-GE3 | 功能描述:MOSFET 60V 300mA 0.35W 2.0ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002KT3G | 功能描述:MOSFET SMALL SIGNAL MOSFET 60V 380mA SINGL CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002KTB | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002KTB6 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
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