参数资料
型号: 2N7002KTB
元件分类: 小信号晶体管
英文描述: 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 5/5页
文件大小: 111K
代理商: 2N7002KTB
PAGE . 5
August 11.2010-REV.01
MOUNTING PAD LAYOUT
Packing information
T/R - 4K per 7" plastic Reel
ORDER INFORMATION
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
0.016
(0.40)
(0.45)
0.017
(1.35)
0.053
(0.50)
(0.019)
(0.50)
(0.019)
SOT-523
2N7002KTB
相关PDF资料
PDF描述
2N7002KW 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002LG-AE2-R 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
2N7002TRLEADFREE 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002BK 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002TT2T2 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
2N7002KTB6 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected
2N7002K-TP 功能描述:MOSFET 350mW, 60V, 340mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002KU 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:N Channel MOSFET
2N7002KW 功能描述:MOSFET NCHAN Enhance MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002KW _R1 _00001 制造商:PanJit Touch Screens 功能描述: