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参数资料
| 型号： | 2N7002MTF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 115MA SOT-23 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3L |
| 包装： | 标准包装 |
| 其它名称： | 2N7002MTFDKR |
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol
Parameter
Conditions
Typ e
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
I DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V GS = 0 V, I D = 10 μA
V DS = 48 V, V GS = 0 V
All
2N7000
60
1
V
μA
T J =125°C
1
mA
V DS = 60 V, V GS = 0 V
T J =125°C
2N7002
NDS7002A
1
0.5
μA
mA
I GSSF
I GSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 15 V, V DS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -15 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
2N7000
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
10
100
-10
-100
nA
nA
nA
nA
ON CHARACTERISTICS (Note 1)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 1 mA
2N7000
0.8
2.1
3
V
V DS = V GS , I D = 250 μA
2N7002
NDS7002A
1
2.1
2.5
R DS(ON)
Static Drain-Source On-Resistance V GS = 10 V, I D = 500 mA
2N7000
1.2
5
?
V GS = 4.5 V, I D = 75 mA
T J =125°C
1.9
1.8
9
5.3
V GS = 10 V, I D = 500 mA
V GS = 5.0 V, I D = 50 mA
V GS = 10 V, I D = 500 mA
V GS = 5.0 V, I D = 50 mA
T J =100°C
T J =100C
T J =125°C
T J =125°C
2N7002
NDS7002 A
1.2
1.7
1.7
2.4
1.2
2
1.7
2.8
7.5
13.5
7.5
13.5
2
3.5
3
5
V DS(ON)
Drain-Source On-Voltage
V GS = 10 V, I D = 500 mA
2N7000
0.6
2.5
V
V GS = 4.5 V, I D = 75 mA
0.14
0.4
V GS = 10 V, I D = 500mA
V GS = 5.0 V, I D = 50 mA
V GS = 10 V, I D = 500mA
V GS = 5.0 V, I D = 50 mA
2N7002
NDS7002A
0.6
0.09
0.6
0.09
3.75
1.5
1
0.15
2N7000.SAM Rev. A1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002MTF | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| 2N7002MTF_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Small Signal MOSFET |
| 2N7002N1PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002NT1 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:30 V, 154 mA, Single |
| 2N7002P | 制造商:NXP Semiconductors 功能描述:MOSFETN CH60V0.36ASOT23 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.36A,SOT23 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.36A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:360mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.75V; No. of Pins:3 ;RoHS Compliant: Yes |
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