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参数资料
| 型号： | 2N7002MTF |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 115MA SOT-23 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3L |
| 包装： | 标准包装 |
| 其它名称： | 2N7002MTFDKR |
Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A
2
3
V GS = 10V
9.0
8.0
7.0
2 .5
V GS =4.0V
4 .5
5 .0
1 .5
1
6.0
2
6 .0
7 .0
5.0
1 .5
8 .0
9 .0
10
0 .5
4.0
1
0
0
1
2
3
4
3.0
5
0 .5
0
0 .4
0 .8
1 .2
1 .6
2
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2
V GS = 10V
I D , DRA IN CURRENT (A)
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3
V GS = 10V
1.75
I D = 500m A
2 .5
1.5
1.25
1
0.75
2
1 .5
1
0 .5
T J = 1 2 5 ° C
25°C
-55°C
0.5
-5 0
-2 5
0
25
50
75
100
125
150
0
0
0 .4
0 .8
1 .2
1 .6
2
2
T J , JUNCTION T EMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1 .1
1.6
V DS = 10V
T J = -55°C
25°C
125°C
1 .0 5
V DS = V GS
I D = 1 mA
1
1.2
0 .9 5
0.8
0 .9
0.4
0 .8 5
0
0
2
4
6
8
10
0 .8
-50
-25
0
25
50
75
100
125
150
V
GS
, GATE TO SOURCE VOLTAGE (V)
T J , JUNCTION TEM PERATURE (°C)
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
2N7000.SAM Rev. A1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002MTF | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| 2N7002MTF_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Small Signal MOSFET |
| 2N7002N1PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002NT1 | 制造商:WILLAS 制造商全称:WILLAS 功能描述:30 V, 154 mA, Single |
| 2N7002P | 制造商:NXP Semiconductors 功能描述:MOSFETN CH60V0.36ASOT23 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.36A,SOT23 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,60V,0.36A,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:360mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.75V; No. of Pins:3 ;RoHS Compliant: Yes |
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