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参数资料
| 型号： | 2N7002W-7-F |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 115MA SOT323 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 其它图纸： | SOT-323 Package Top SOT-323 Package Side 1 SOT-323 Package Side 2 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SOT-323 |
| 包装： | 带卷 (TR) |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | 2N7002W-FDITR |
2N7002W
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ? 1.0M ?
Symbol
V DSS
V DGR
Value
60
60
Unit
V
V
Gain-Source Voltage
Drain Current (Note 5)
Continuous
Pulsed
Continuous
Continuous @ +100 ? C
Pulsed
V GSS
I D
? 20
? 40
115
73
800
V
mA
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Derating above T A = +25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R ? JA
T J , T STG
Value
200
1.60
625
-55 to +150
Unit
mW
mW ?
? C/W ?
? C ?
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ T C = +25°C
@ T C = +125°C
Gate-Body Leakage
BV DSS
I DSS
I GSS
60
?
?
70
?
?
?
1.0
500
? 10
V
? A
nA
V GS = 0V, I D = 10 ? A
V DS = 60V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
1.0
?
2.0
V
V DS = V GS , I D = 250 ? A
Static Drain-Source On-Resistance
@ T j = +125°C
On-State Drain Current
Forward Transconductance
@ T J = +25°C
R DS(ON)
I D(ON)
g FS
??
0.5
80 ?
1.8
2.6
1.0
?
7.5
13.5
?
?
? ?
A
mS
V GS = 5.0V, I D = 0.05A
V GS = 10V, I D = 0.5A
V GS = 10V, V DS = 7.5V
V DS = 10V, I D = 0.2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
22
11
2.0
50
25
5.0
pF
pF
pF
V DS = 25V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Turn-Off Delay Time
t D(ON)
t D(OFF)
?
?
7.0
11
20
20
ns
ns
V DD = 30V, I D = 0.2A,
R L = 150 ? , ? V GEN = 10V,
R GEN = 25 ?
Notes:
5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
2N7002W
Document number: DS30099 Rev. 14 - 2
2 of 4
www.diodes.com
September 2013
? Diodes Incorporated
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