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参数资料
| 型号： | 2N7051D74Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 2/4页 |
| 文件大小： | 73K |
| 代理商： | 2N7051D74Z |
3
2N7051
/
2N7053
/
NZT7053
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
100
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 1.0 mA, IC = 0
12
V
ICBO
Collector-Cutoff Current
VCB = 80 V, IE = 0
0.1
A
ICES
Collector-Cutoff Current
VCE = 80 V, IE = 0
0.2
A
IEBO
Emitter-Cutoff Current
VEB = 7.0 V, IC = 0
0.1
A
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 100 mA, VCE = 5.0 V
IC = 1.0 A, VCE = 5.0 V
10,000
1,000
20,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 0.1 mA
1.5
V
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VBE = 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 1.0%
FT
Transition Frequency
IC = 100 mA, VCE = 5.0 V
200
MHz
Ccb
Collector-Base Capacitance
VCB= 10 V,f= 1.0 MHz 2N7053
8.0
pF
hfe
Small-Signal Current Gain
VCE = 5.0 V, IC = 100 mA,
f = 20 MHz
10
100
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
1
0
20
40
60
80
100
I - COLLECTOR CURRENT (A)
h
-
TY
P
IC
A
L
P
U
LS
E
D
C
U
R
E
N
T
G
A
IN
(
K
)
C
FE
125 °C
25 °C
- 40°C
Collector-Emitter Saturation
Voltage vs Collector Current
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
E
CT
OR
E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
C
CE
S
A
T
β = 1000
125 °C
25 °C
- 40°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7052 | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N7052_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
| 2N7052_D74Z | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N7052_Q | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N7053 | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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