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参数资料
| 型号： | 2N7053D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 文件页数： | 1/4页 |
| 文件大小： | 73K |
| 代理商： | 2N7053D26Z |
2N7051
NZT7053
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
100
V
VCBO
Collector-Base Voltage
100
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current - Continuous
1.5
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
C
B
E
TO-92
Symbol
Characteristic
Max
Units
2N7051
2N7053
*NZT7053
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
1,000
8.0
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
50
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
125
°C/W
2N7053
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
1997 Fairchild Semiconductor Corporation
B
C
SOT-223
E
TO-226
C
B
E
2N7051
/
2N7053
/
NZT7053
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