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参数资料
| 型号： | 2N7053D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 文件页数： | 3/4页 |
| 文件大小： | 73K |
| 代理商： | 2N7053D26Z |
NPN Darlington Transistor
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0
255075
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-P
O
W
E
R
DI
S
IP
AT
IO
N
(W
)
D
o
TO-92
SOT-223
TO-226
Base Emitter ON Voltage vs
Collector Current
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
M
IT
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
O
N
V = 5V
CE
125 °C
25 °C
- 40°C
Base-Emitter Saturation
Voltage vs Collector Current
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
C
BE
S
A
T
β = 1000
125 °C
25 °C
- 40°C
Junction Capacitance vs
Reverse Bias Voltage
0.1
1
10
100
1
10
100
REVERSE BIAS VOLTAGE (V)
J
U
NC
T
IO
N
CAP
AC
IT
AN
CE
(
p
F
)
C cb
C ib
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
LL
E
C
TO
R
C
U
R
E
N
T
(
n
A
)
A
CB
O
V
= 80V
CB
o
Typical Collector-Emitter Leakage
Current vs Temperature
040
80
120
160
0.1
1
10
100
1000
T - JUNCTION TEMP ERATURE ( C)
I
-
L
E
AK
AG
E
CU
RR
E
N
T
(n
A
)
J
CE
S
V
= 80V
CE
V
= 0
BE
o
2N7051
/
2N7053
/
NZT7053
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