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参数资料
| 型号： | 2N7274R |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件页数： | 3/7页 |
| 文件大小： | 80K |
| 代理商： | 2N7274R |
2001 Fairchild Semiconductor Corporation
2N7274D, 2N7274R, 2N7274H Rev. A
2N7274D, 2N7274R, 2N7274H - Registration Pending
Post-Radiation Electrical Specications TC = +25oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
2N7274D, R
VGS = 0, ID = 1mA
200
-
V
(Note 5, 6)
BVDSS
2N7274H
VGS = 0, ID = 1mA
190
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
2N7274D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
2N7274H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
2N7274D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
2N7274H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
2N7274D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
2N7274H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain CurrenT
(Note 4, 6)
IDSS
2N7274D, R
VGS = 0, VDS = 160V
-
25
A
(Note 5, 6)
IDSS
2N7274H
VGS = 0, VDS = 160V
-
100
A
Drain-Source
On-state Volts
(Note 1, 4, 6)
VDS(on)
2N7274D, R
VGS = 10V, ID = 8A
-
4.20
V
(Note 1, 5, 6)
VDS(on)
2N7274H
VGS = 16V, ID = 8A
-
6.30
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
2N7274D, R
VGS = 10V, ID = 5A
-
0.500
(Note 1, 5, 6)
RDS(on)
2N7274H
VGS = 14V, ID = 5A
-
0.750
NOTES:
1. Pulse test, 300
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 3/03/90 on TA17632 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7274H | 8 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N7285D3 | 16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N7285R1 | 16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N7285R3 | 16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N7285H4 | 16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7275D1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-205AF |
| 2N7275D2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-205AF |
| 2N7275D3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-205AF |
| 2N7275H1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-205AF |
| 2N7275H2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-205AF |
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