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参数资料
| 型号： | 2N7336 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 100 V, 0.7 ohm, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | CERDIP-14 |
| 文件页数： | 1/3页 |
| 文件大小： | 64K |
| 代理商： | 2N7336 |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 692, REV. -
HERMETIC POWER MOSFET COMBINATION
N-CHANNEL / P-CHANNEL QUAD
(2 EACH)
DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP.
MAXIMUM RATINGS--N/P - CHANNEL
ALL RATINGS ARE AT T
A = 25C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TY
P.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
20
Volts
CONTINUOUS DRAIN CURRENT VGS=10V, TC = 25
C
VGS=10V, TC = 100
C
ID
-
1.0 / -0.75
0.6 / -0.5
Amps
PULSED DRAIN CURRENT
@ TC = 25
C
IDM
-
4.0 / 3.0
Amps(pk)
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+150
C
THERMAL RESISTANCE JUNCTION TO CASE
(PER FET)
R
JC
-
17
C/W
TOTAL DEVICE DISSIPATION @ TC = 25
C (PER FET)
PD
-
1.4
Watts
ELECTRICAL CHARACTERISTICS – N-CHANNEL
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250
mA
BVDSS
100
-
Volts
DRAIN TO SOURCE ON STATE RESISTANCE
ID = 0.6A, VGS = 10V@TJ = 25
C
RDS(ON)
-
0.7
W
FORWARD TRANSCONDUCTANCE
VDS
15Vdc, I
DS = 0.6A
gfs
0.86
-
S(1/
W)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x max rating, Vdc, VGS = 0Vdc
VGS = 0Vdc, TJ = 125
C
IDSS
-
25
250
mA
GATE TO BODY LEAKAGE CURRENT
VGS =
20Vdc,
VDS = 0Vdc
IGSS
-
+100
-100
nA
TOTAL GATE CHARGE
(VGS = 10 Vdc,
GATE TO SOURCE CHARG
VDS = 0.5 x max. rating,
GATE TO DRAIN CHARGE
ID = 1.0Adc)
Qg
Qgs
Qgd
-
15
7.5
nC
TURN ON DELAY TIME
(VDD = 50V,
RISE TIME
ID = 1.0Adc,
TURN OFF DELAY TIME
RG = 24
W)
FALL TIME
td(ON)
tr
td(ON)
tf
-
20
25
40
nsec
FORWARD VOLTAGE,
(IS = 1.0Adc, VGS = 0V)
VSD
-
1.5
Volts
REVERSE RECOVERY TIME (IF = 1.0Adc, VDD
50Vdc
REVERSE RECOVERY CHARGE
di/dt = 100A/
msec)
trr
Qrr
-
200
0.83
nsec
mC
INPUT CAPACITANCE
(VDS = 25 Vdc,
OUTPUT CAPACITANCE
VGS = 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz)
Ciss
Coss
Crss
-
180
82
15
-
pF
2N7336
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