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| 型号： | 2N7382 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封装： | TO-257AA, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 214K |
| 代理商： | 2N7382 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/615
T4-LDS-0125 Rev. 1 (091145)
Page 2 of 4
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = -12V, ID = -11.0A
VDS = -50V
Qg(on)
Qgs
Qgd
45
10
25
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = -11.0A, VGS = -12Vdc,
Gate drive impedance = 7.5
Ω,
VDD = -50Vdc
td(on)
tr
td(off)
tf
30
50
70
ns
Diode Reverse Recovery Time
di/dt ≤ -100A/s, VDD ≤ -50V,
IF = -11.0A
trr
250
ns
POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = -1mAdc
V(BR)DSS
-100
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = -1.0mA JANSR
VDS ≥ VGS, ID = -1.0mA JANSF
VGS(th)1
-2.0
-4.0
-5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
IGSS1
±100
nAdc
Drain Current
VGS = 0V, VDS = -80V
IDSS1
-25
Adc
Static Drain-Source On-State Resistance
VGS = -12V, ID = -7.0A pulsed
rDS(on)
0.30
Diode Forward Voltage
VGS = 0V, ID = -11.0A pulsed
VSD
-3.0
Vdc
Note:
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (80V)
conditions.
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