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参数资料
| 型号： | 2N7382 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封装： | TO-257AA, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 214K |
| 代理商： | 2N7382 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED P-CHANNEL MOSFET
Qualified per MIL-PRF-19500/615
T4-LDS-0125 Rev. 1 (091145)
Page 3 of 4
Single Event Effect (SEE) Characteristics:
Heavy Ion testing of the 2N7382 device was completed by similarity of die structure to the 2N7389. The
2N7389 has been characterized at the Texas A&M cyclotron. The following SOA curve has been established using the
elements, LET, range, and Total Energy conditions as shown:
2N7382
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
5
10
15
20
25
Gate Bias, V
Drain
B
ias,
V
TAMU Ar
LET = 8.1
Range=230um
Total Energy=558MeV
TAMU Kr
LET = 26.8
Range=170um
Total Energy=1121MeV
TAMU Ag
LET = 40.6
Range=150um
Total Energy=1426MeV
TAMU Au
LET=80.2
Range=155um
Total Energy=1884MeV
It should be noted that total energy levels are considered to be a factor in SEE
characterization. Comparisons to other datasets should not be based on LET alone. Please consult
factory for more information.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N739 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 |
| 2N7395 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
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| 2N7398 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-205AF |
| 2N740 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SI NPN LO-PWR BJT |
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