参数资料
型号: 2PB710AQT/R
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封装: PLASTIC, SC-59, 3 PIN
文件页数: 2/6页
文件大小: 192K
代理商: 2PB710AQT/R
1999 May 31
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB710A
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in an SC-59 plastic package.
NPN complement: 2PD602A.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
2PB710AQ
DQ
2PB710AR
DR
2PB710AS
DS
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SC-59) and symbol.
handbook, halfpage
12
1
3
2
3
MAM322
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
60
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
500
mA
ICM
peak collector current
1
A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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相关代理商/技术参数
参数描述
2PB710AR 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PNP general purpose transistor
2PB710AR T/R 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PB710AR,115 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PB710ARL 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:50 V, 500 mA PNP general-purpose transistors
2PB710ARL,215 功能描述:两极晶体管 - BJT 50V 500MA PNP GEN-PURPOSE TRAN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2