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参数资料
型号： 2PB710AQT/R
厂商： NXP SEMICONDUCTORS
元件分类： 小信号晶体管
英文描述： 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封装： PLASTIC, SC-59, 3 PIN
文件页数： 6/6页
文件大小： 192K
代理商： 2PB710AQT/R
2SC5181
6
VCE = 1 V, IC = 10 mA, ZO = 50
FREQUENCY
S11
S21
S12
S22
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
ANG
–39.4
–40.5
–42.1
–44.8
–47.0
–49.2
–54.0
–56.1
–62.0
ANG
–71.3
–82.5
–89.5
–98.6
–110.3
–127.3
–140.2
–176.6
153.2
MAG
0.526
0.434
0.375
0.355
0.335
0.314
0.283
0.262
0.247
ANG
62.8
61.0
59.7
61.4
60.6
58.2
57.6
57.4
54.8
MAG
7.550
5.924
4.927
4.307
3.740
3.326
3.041
2.781
2.498
MAG
0.069
0.096
0.119
0.141
0.165
0.187
0.207
0.219
0.235
MAG
0.324
0.232
0.167
0.128
0.094
0.067
0.055
0.068
0.083
ANG
104.5
94.2
85.5
80.0
74.9
68.7
64.9
62.2
56.9
FREQUENCY
S11
S21
S12
S22
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
ANG
–24.4
–30.3
–37.6
–45.0
–50.5
–55.0
–60.8
–65.6
–70.9
ANG
–29.6
–38.5
–47.8
–56.7
–62.9
–69.2
–75.6
–83.6
–91.1
MAG
0.940
0.861
0.778
0.745
0.712
0.659
0.601
0.556
0.522
ANG
66.0
59.6
55.0
51.4
47.9
44.4
43.6
41.6
37.8
MAG
3.172
2.995
2.797
2.715
2.646
2.467
2.343
2.243
2.095
MAG
0.106
0.143
0.172
0.196
0.220
0.240
0.255
0.261
0.268
MAG
0.901
0.811
0.719
0.671
0.621
0.549
0.488
0.438
0.380
ANG
143.7
132.6
121.7
112.2
105.3
97.5
89.8
84.3
77.3
VCE = 2 V, IC = 3 mA, ZO = 50
FREQUENCY
S11
S21
S12
S22
MHz
600.00
800.00
1000.00
1200.00
1400.00
1600.00
1800.00
2000.00
2200.00
ANG
–34.8
–40.4
–46.1
–50.7
–54.5
–57.3
–62.3
–65.0
–70.0
ANG
–44.9
–55.3
–63.1
–69.9
–74.0
–78.9
–82.5
–93.2
–103.1
MAG
0.778
0.656
0.563
0.519
0.481
0.441
0.397
0.363
0.343
ANG
60.5
56.1
54.8
54.2
53.1
51.3
51.5
51.1
48.8
MAG
6.256
5.350
4.650
4.225
3.809
3.408
3.144
2.918
2.647
MAG
0.088
0.114
0.137
0.157
0.176
0.195
0.214
0.223
0.236
MAG
0.678
0.543
0.447
0.388
0.325
0.270
0.231
0.193
0.148
ANG
125.7
113.4
102.7
94.8
88.9
81.8
76.3
72.7
66.8
VCE = 2 V, IC = 1 mA, ZO = 50
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相关代理商/技术参数
参数描述
2PB710AR 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PNP general purpose transistor
2PB710AR T/R 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PB710AR,115 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2PB710ARL 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:50 V, 500 mA PNP general-purpose transistors
2PB710ARL,215 功能描述:两极晶体管 - BJT 50V 500MA PNP GEN-PURPOSE TRAN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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