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| 型号： | 2PD602AQL/DG |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 4/9页 |
| 文件大小： | 57K |
| 代理商： | 2PD602AQL/DG |
2PD602AXL_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 27 October 2008
4 of 9
NXP Semiconductors
2PD602AxL
50 V, 500 mA NPN general-purpose transistors
7.
Characteristics
[1]
Pulse test: tp ≤ 300 s; δ≤ 0.02.
8.
Test information
8.1 Quality information
This product has been qualied in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualication for discrete semiconductors, and is
suitable for use in automotive applications.
Table 8.
Characteristics
Tamb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off current VCB =60V; IE = 0 A
--10
nA
VCB =60V; IE =0A;
Tj = 150 °C
--5
A
IEBO
emitter-base cut-off current
VEB =4V; IC = 0 A
--10
nA
hFE
DC current gain
VCE =10V;
IC = 500 mA
[1] 40
-
hFE group Q
VCE =10V;
IC = 150 mA
[1] 85
-
170
hFE group R
VCE =10V;
IC = 150 mA
[1] 120
-
240
hFE group S
VCE =10V;
IC = 150 mA
[1] 170
-
340
VCEsat
collector-emitter saturation
voltage
IC = 300 mA;
IB =30mA
[1] -
-
600
mV
fT
transition frequency
VCE =10V;
IC = 50 mA;
f = 100 MHz
hFE group Q
140
-
MHz
hFE group R
160
-
MHz
hFE group S
180
-
MHz
Cc
collector capacitance
VCB =10V;
IE =ie =0A;
f=1MHz
--15
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2PD602AR | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN general purpose transistor |
| 2PD602AR T/R | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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| 2PD602ARL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:50 V, 500 mA NPN general-purpose transistors |
| 2PD602ARL,215 | 功能描述:两极晶体管 - BJT 50V 500MA NPN GEN-PURPOSE TRAN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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