2SA1012
PNP
Plastic-Encapsulate
Transistor
Features
Capable of 25 Watts of Power Dissipation.
Collector-current -5.0A
Collector-base Voltage -60V
Operating and storage junction temperature range: -55
to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
-50
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-1mAdc, IE=0)
-60
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-0.1mAdc, IC=0)
-5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-50Vdc, IE=0)
---
-1.0
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=-1Adc, VCE=-1Vdc)
70
240
---
hFE(2)
DC Current Gain
(IC=-3Adc, VCE=-1Vdc)
30
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-3Adc, IB=-150mAdc)
-0.2
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-3Adc, IB=-150mAdc)
-0.9
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=-1Adc, VCE=-4Vdc)
60
---
MHz
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: 1
2006/11/21
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
IEBO
Emitter Cutoff Current
(VEB=-5.0Vdc, IC=0)
---
-1.0
uAdc
-1.2
-0.4
()
---
PF
VCB=-10V, IE=0, f=1MHz
Collector output capacitance
Cob
170(Typ)
INCHES
MM