- 您现在的位置：买卖IC网 > PDF目录55784 > 2SA1124S (PANASONIC CORP) 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2SA1124S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, SC-51, TO-92L-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 234K |
| 代理商： | 2SA1124S |
Transistors
1
Publication date: November 2002
SJC00012BED
2SA1124
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2632
■ Features
Satisfactory forward current transfer ratio h
FE collector current IC
characteristics.
High collector-emitter voltage (Base open) V
CEO
Small collector output capacitance (Common base, input open cir-
cuited) Cob
Makes up a complementary pair with 2SC2632, which is optimum
for the pre-driver stage of a 40 W to 60 W output amplifier.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
150
V
Collector-emitter voltage (Base open)
VCEO
150
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 0.1 mA, IB = 0
150
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 100 V, I
E
= 0
1
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 2 mA
130
330
Collector-emitter saturation voltage
VCE(sat)
IC = 30 mA, IB = 3 mA
1V
Transition frequency
fT
VCB
= 10 V, I
E
= 10 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
5
pF
(Common base, input open circuited)
Noise voltage
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB
150
300
mV
Rg = 100 k, Function = FLAT
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.9±0.2
0.7±0.1
4.9±0.2
8.6
±
0.2
0.7
+0.3 –0.2
13.5
±
0.5
2.54±0.15
(3.2)
(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
13
2
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC-51
TO-92L-A1 Package
Rank
R
S
hFE
130 to 220
185 to 330
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1160-BTPE6 | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1200 | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1201O | 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1201Y | 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1202-Y | 400 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1124T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 2SA1125 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-220AB |
| 2SA1125Q | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-220AB |
| 2SA1125R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-220AB |
| 2SA1125S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-220AB |
发布紧急采购，3分钟左右您将得到回复。