参数资料
型号: 2SA1013-R
元件分类: 小信号晶体管
英文描述: 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: TO-92MOD, 3 PIN
文件页数: 3/4页
文件大小: 160K
代理商: 2SA1013-R
2SA1013
2004-07-07
3
Collector current IC (A)
fT – IC
T
ran
si
tion
fr
eque
nc
y
f
t
(M
H
z)
Collector-base voltage VCE (V)
Cob – VCB
Coll
ect
or
out
pu
tca
pa
cit
a
nc
e
C
ob
(p
F
)
Safe Operating Area
C
ollect
or
c
urre
nt
I C
(
A
)
10
-1
Common emitter
Ta
= 25°C
2
VCE = 5 V
300
3
10
30
100
300
30
50
100
5
3
10
-1
Common emitter
f
= 1 MHz
Ta
= 25°C
300
3
10
30
100
300
30
50
100
5
3
Collector-emitter voltage VCE (V)
*: Single nonrepetitive pulse
Ta
= 25°C
Curves must be derated linearly
with increase in temperature.
0.003
1
IC max = 1.0 A
DC operation
Ta
= 25°C
IC max (pulsed)*
VCEO max
1 ms*
100 ms*
100
30
3
10
0.01
0.03
0.1
0.3
0.5
1
3
0.05
10 ms*
Thermal limited
S/B limited
300
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2SA1032C 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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相关代理商/技术参数
参数描述
2SA1013-R(F) 制造商:Toshiba America Electronic Components 功能描述:
2SA1013-R(TE6,F,M) 功能描述:两极晶体管 - BJT Transistor PNP, 160V, 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1013-Y 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Epitaxial Silicon Transistor
2SA1015 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1015_07 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications