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参数资料
| 型号： | 2SA1013-Y-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-92MOD, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 102K |
| 代理商： | 2SA1013-Y-BP |
2SA1013-O
PNP
Epitaxial Silicon
Transistor
Features
Capable of 0.9Watts of Power Dissipation.
Collector-current -1.0A
Collector-base Voltage -160V
Operating and storage junction temperature range: -55
to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
-160
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
-160
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10mAdc, IC=0)
-6.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-150Vdc, IE=0)
---
-1.0
uAdc
ICEO
Collector Cutoff Current
(VCB=-120Vdc, IE=0)
---
-10
uAdc
IEBO
Emitter Cutoff Current
(VEB=-6.0Vdc, IC=0)
---
-1.0
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=-200mAdc, VCE=-5.0Vdc)
65
310
---
hFE(2)
DC Current Gain
(IC=-50mAdc, VCE=-5.0Vdc)
40
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-1.5
Vdc
VBE
Base-Emitter Saturation Voltage
(IC=-5.0mAdc, VCE=-5.0Vdc)
---
-0.75
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=-200mAdc, VCE=-5.0Vdc,
f=30MHz)
-15
---
MHz
CLASSIFICATION OF HFE(1)
Rank
R
O
Y
Range
60-120
120-200
200-300
TO-92MOD
A
B
C
D
E
F
G
H
I
J
K
M
N
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.030
---
.750
B
---
.039
---
1.00
C
---
.031
---
.80
D
---
.024
---
0.60
E
---
.201
---
5.10
F
.050
1.27
G
.050
1.27
H
.100
2.54
I
.039
1.00
J
---
.087
---
2.20
K
---
.024
---
.60
L
---
.323
---
8.20
M
---
.413
---
10.50
N
---
.161
---
4.10
123
1. EMITTER
2. COLLECTOR
3. BASE
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision:
4
200
8/02/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0 and MSL rating 1
2SA1013-Y
2SA1013-R
Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1013O | 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1013O-BP | 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1013O | 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1015TPE1 | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1015-OTPE2 | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1015 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1015_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
| 2SA1015_09 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| 2SA1015BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 |
| 2SA1015GR | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR SUB: 2SA10 |
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