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参数资料
| 型号： | 2SA1029C |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92(1), 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 160K |
| 代理商： | 2SA1029C |
Data Sheet P15145EJ1V0DS00
3
2SC5599
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
Mounted on Glass Epoxy Board
(1.08 cm
2
× 1.0 mm (t) )
300
250
200
150
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
1.0
0.8
0.6
0.4
0.2
02
4
6
8
10
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
VCE = 1 V
100
80
40
60
20
0
0.4
0.2
0.6
0.8
1.0
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 1 V
1 000
100
10
110
0.1
100
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
IB : 20 A step
IB = 20 A
60 A
100 A
140 A
180 A
200 A
35
25
30
15
20
5
10
01
2
34
5
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1030B | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1029DTZ | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1029C | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1029D | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1030 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1029CTZ | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1029D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1029DTZ | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA103 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Ge PNP Drift |
| 2SA1030 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. TO-92-55V -.1A .2W ECB |
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