参数资料
型号: 2SA1029C
元件分类: 小信号晶体管
英文描述: 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: TO-92(1), 3 PIN
文件页数: 6/6页
文件大小: 160K
代理商: 2SA1029C
Data Sheet P15145EJ1V0DS00
6
2SC5599
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
10
5
15
0
1
10
100
VCE = 1 V
f = 1 GHz
MAG
MSG
|S21e|
2
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
10
5
15
0
1
10
100
VCE = 2 V
f = 1 GHz
MAG
MSG
|S21e|
2
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
10
5
15
0
1
10
100
VCE = 3 V
f = 1 GHz
MAG
MSG
|S21e|
2
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
10
5
15
0
1
10
100
VCE = 1 V
f = 2 GHz
|S21e|
2
MAG
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
10
5
15
0
1
10
100
VCE = 2 V
f = 2 GHz
|S21e|
2
MAG
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
Maximum
Stable
Power
Gain
MSG
(dB)
20
10
5
15
0
1
10
100
VCE = 3 V
f = 2 GHz
|S21e|
2
MAG
相关PDF资料
PDF描述
2SA1030B 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1029DTZ 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1029C 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1029D 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1030 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2SA1029CTZ 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1029D 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92
2SA1029DTZ 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA103 制造商:未知厂家 制造商全称:未知厂家 功能描述:Ge PNP Drift
2SA1030 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. TO-92-55V -.1A .2W ECB