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参数资料
| 型号： | 2SA1034R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 257K |
| 代理商： | 2SA1034R |
Transistors
1
Publication date: January 2003
SJC00010BED
2SA1034, 2SA1035
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SC2405, 2SC2406
■ Features
Low noise voltage NV
High forward current transfer ratio h
FE
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5
10
0
to
0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
Marking Symbol:
2SA1034: F
2SA1035: H
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SA1034
VCBO
35
V
(Emitter open)
2SA1035
55
Collector-emitter voltage 2SA1034
VCEO
35
V
(Base open)
2SA1035
55
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SA1034
VCBO
IC = 10 A, IE = 0
35
V
(Emitter open)
2SA1035
55
Collector-emitter voltage
2SA1034
VCEO
IC = 2 mA, IB = 0
35
V
(Base open)
2SA1035
55
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 0
5V
Base-emitter voltage *
1
VBE
VCE = 1 V, IC = 100 mA
0.7
1.0
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 10 V, I
B
= 0
1
A
Forward current transfer ratio *
2
hFE
VCE = 5 V, IC = 2 mA
180
700
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 100 mA, IB = 10 mA
0.6
V
Transition frequency
fT
VCB
= 5 V, I
E
= 2 mA, f = 200 MHz
200
MHz
Noise voltage
NV
VCE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
150
mV
Rg = 100 k, Function = FLAT
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1034S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 50MA I(C) | TO-236AB |
| 2SA1034T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 50MA I(C) | TO-236AB |
| 2SA1035 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type |
| 2SA10350SL | 功能描述:TRANS PNP 55VCEO 50MA MINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA1035R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 50MA I(C) | TO-236AB |
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