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参数资料
| 型号： | 2SA1037S-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 72K |
| 代理商： | 2SA1037S-TP |
2SA1037
PNP Silicon
Epitaxial Transistors
Features
Small Package
Mounting:any
ROHS
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision:
2
200
8/01/01
TM
Micro Commercial Components
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0 and MSL Rating 1
www.mccsemi.com
1 of 2
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
position
Compliant
Maximum Ratings @ Ta = 25
(unless otherwise noted)
Symbol
Parameter
Value
Unit
IC
Collector Current
-0.15
A
PD
Total Device Dissipation
0.2
W
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc,IB=0)
-50
V
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-50uAdc,IE=0)
-60
V
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=-50uAdc,IC=0)
-6.0
V
ICBO
Collector-Base Cutoff Current
(VCB=-60Vdc, IE=0)
-0.1
Adc
IEBO
Emitter-Base Cutoff Current
(VEB=-6.0Vdc, IC=0)
-0.1
uAdc
ON CHARACTERISTICS
HFE
DC Current Gain
(IC=-1.0mAdc, VCE=-6.0Vdc)
120
560
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-5.0mAdc, IB=-5.0mAdc)
-0.5
Vdc
)7
Transition Frequency
(VCE=-12Vdc,IC=-2mAdc,f=30MHZ)
120
MHZ
CLASSIFICATION OF
hFE
Rank
Q
R
S
Range
120-270
180-390
270-560
Marking
FQ
FR
FS
E
B
C
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| 2SA1038STPR | 功能描述:两极晶体管 - BJT TRANS GP BJT PNP 120V 0.05A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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